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  ON Semiconductor Electronic Components Datasheet  

MCH6001 Datasheet

RF Transistor

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Ordering number : ENA1601A
MCH6001
RF Transistor
8V, 150mA, fT=16GHz NPN Dual MCPH6
http://onsemi.com
Features
Low-noise use : NF=1.2dB typ (f=1GHz)
High cut-off frequency : fT=16GHz typ (VCE=5V)
High gain : |S21e|2=16dB typ (f=1GHz)
Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
When mounted on glass epoxy substrate 1unit
When mounted on glass epoxy substrate
Ratings
15
8
2
150
400
600
150
--55 to +150
Unit
V
V
V
mA
mW
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-019
2.0
654
0.15 MCH6001-TL-E
0 to 0.02
1 23
0.65 0.3
123
654
1 : Base1
2 : Emitter1
3 : Collector2
4 : Base2
5 : Emitter2
6 : Collector1
MCPH6
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
GT
TL
Electrical Connection
C1 E2 B2
B1 E1 C2
Semiconductor Components Industries, LLC, 2013
August, 2013
92612 TKIM/N1809AB TKIM TC-00002075 No. A1601-1/6


  ON Semiconductor Electronic Components Datasheet  

MCH6001 Datasheet

RF Transistor

No Preview Available !

MCH6001
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Forward Transfer Gain
Noise Figure
ICBO
IEBO
hFE
fT
|S21e|2
NF
Conditions
VCB=5V, IE=0A
VEB=1V, IC=0A
VCE=5V, IC=50mA
VCE=5V, IC=50mA
VCE=5V, IC=50mA, f=1GHz
VCE=1V, IC=10mA, f=1GHz
Ratings
min typ
60
13 16
16
1.2
max
1.0
1.0
150
1.8
Unit
μA
μA
GHz
dB
dB
Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
MCH6001-TL-E
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb Free
140 IC -- VCE
1.5mA
120
1.2mA
100
0.9mA
80
60 0.6mA
40 0.3mA
20
0 IB=0mA
02468
Collector-to-Emitter Voltage, VCE -- V IT13901
150 IC -- VBE
120
90
60
30
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V IT13902
No. A1601-2/6


Part Number MCH6001
Description RF Transistor
Maker ON Semiconductor
Total Page 6 Pages
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