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  ON Semiconductor Electronic Components Datasheet  

MCR16N Datasheet

Reverse Blocking Thyristors

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MCR16N .comPreferred Device
Silicon Coneterot4llUed RectifiersReverse Blocking Thyristors
ShDesigned primarily for half–wave ac control applications, such as
tamotor controls, heating controls, and power supplies; or wherever
ahalf–wave, silicon gate–controlled devices are needed.
.DBlocking Voltage to 800 Volts
On–State Current Rating of 16 Amperes RMS
wwHigh Surge Current Capability — 160 Amperes
w Rugged Economical TO–220AB Package
mGlass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT, and IH Specified for
oEase of Design
.cHigh Immunity to dv/dt — 100 V/µsec Minimum at 125°C
Device Marking: Logo, Device Type, e.g., MCR16N, Date Code
http://onsemi.com
SCRs
16 AMPERES RMS
800 VOLT
G
AK
UMAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
t4Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
e(TJ = –40 to 125°C, Sine Wave, 50 to
60 Hz, Gate Open)
MCR16N
VDRM,
VRRM
800
Unit
Volts
eOn-State RMS Current
IT(RMS)
h(180° Conduction Angles; TC = 80°C)
16
A
Peak Non-repetitive Surge Current
S(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
taCircuit Fusing Consideration
(t = 8.3 ms)
ITSM
I2t
160 A
106 A2sec
aForward Peak Gate Power
(Pulse Width 1.0 µs, TC = 80°C)
PGM
5.0 Watts
.DForward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV) 0.5 Watts
Forward Peak Gate Current
w(Pulse Width 1.0 µs, TC = 80°C)
wOperating Junction Temperature Range
IGM
TJ
2.0
– 40 to
+125
A
°C
w omStorage Temperature Range
Tstg
– 40 to
°C
+150
.c(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
Uapply for zero or negative gate voltage; positive gate voltage shall not be
t4applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
eeratings of the devices are exceeded.
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR16N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
www.DataSh© Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 2
MCR16/D


  ON Semiconductor Electronic Components Datasheet  

MCR16N Datasheet

Reverse Blocking Thyristors

No Preview Available !

MCR16N
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak Forward On–State Voltage* (ITM = 32 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
Hold Current (Anode Voltage = 12 V, Initiating Current = 200 mA,
Gate Open)
VTM
IGT
VGT
IH
Latch Current
(VD = 12 V, Ig = 200 mA)
DYNAMIC CHARACTERISTICS
IL
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On–State Current
(IPK = 50 A, Pw = 30 µs, diG/dt = 1 A/µsec, Igt = 50 mA)
v v*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt
di/dt
RθJC
RθJA
TL
Min
2.0
0.5
4.0
100
1.5 °C/W
62.5
260 °C
Typ Max Unit
— 0.01 mA
— 2.0
— 1.7 Volts
10 20 mA
0.65 1.0 Volts
25 40 mA
30 60 mA
300 — V/µs
— 50 A/µs
http://onsemi.com
2


Part Number MCR16N
Description Reverse Blocking Thyristors
Maker ON Semiconductor
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MCR16N Datasheet PDF






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