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  ON Semiconductor Electronic Components Datasheet  

MCR8DCM Datasheet

Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR8DCM pdf
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MCR8DCM, MCR8DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Surface Mount Lead Form − Case 369C
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage
(Note 1) (TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR8DCM
MCR8DCN
VDRM,
VRRM
600
800
V
On−State RMS Current
(180° Conduction Angles; TC = 105°C)
IT(RMS)
8.0
A
Average On−State Current
(180° Conduction Angles; TC = 105°C)
IT(AV)
5.1
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
ITSM
I2t
80 A
26 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 msec, TC = 105°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 msec, TC = 105°C)
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width 1.0 msec, TC = 105°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to 125 °C
Storage Temperature Range
Tstg −40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM, VRRM for all types can be applied on a continuous basis. Ratings apply
for zero or negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the
device are exceeded.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1
http://onsemi.com
SCRs
8 AMPERES RMS
600 − 800 VOLTS
G
AK
4
12
3
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
YWW
CR
8DCxG
Y
WW
CR8DCx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR8DCM/D


  ON Semiconductor Electronic Components Datasheet  

MCR8DCM Datasheet

Silicon Controlled Rectifiers Reverse Blocking Thyristors

No Preview Available !

MCR8DCM pdf
MCR8DCM, MCR8DCN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)m
Maximum Lead Temperature for Soldering Purposes (Note 3)
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Peak Repetitive Forward or Peak Repetitive Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Peak On−State Voltage (Note 4) (ITM = 16 A)
Gate Trigger Current (Continuous dc)
(VAK = 12 V, RL = 100 W, TJ = 25°C)
(TJ = −40°C)
Gate Trigger Voltage (Continuous dc)
(VAK = 12 V, RL = 100 W, TJ = 25°C)
(TJ = −40°C)
(TJ = 125°C)
Holding Current
(VAK = 12 V, Initiating Current = 200 mA, Gate Open)
Latching Current
(VAK = 12 V, IG = 15 mA, TJ = 25°C)
(VAK = 12 V, IG = 30 mA, TJ = −40°C)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = −40°C
Critical Rate of Rise of Off−State Voltage
(VAK = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Surface mounted on minimum recommended pad size.
3. 1/8from case for 10 seconds.
4. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
Symbol
RqJC
RqJA
RqJA
TL
Symbol
IDRM,
IRRM
VTM
IGT
VGT
IH
IL
dv/dt
Max Unit
2.2 °C/W
88
80
260 °C
Min Typ Max Unit
mA
− − 0.01
− − 5.0
− 1.4 1.8
2.0 7.0 15
− − 30
0.5 0.65 1.0
− − 2.0
0.2 −
4.0 22 30
− − 60
4.0 22 30
− − 60
V
mA
V
mA
mA
V/ms
50 200
ORDERING INFORMATION
Device
Package
Shipping
MCR8DCMT4
DPAK
MCR8DCMT4G
MCR8DCNT4
DPAK
(Pb−Free)
DPAK
2500 / Tape & Reel
MCR8DCNT4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MCR8DCM
Description Silicon Controlled Rectifiers Reverse Blocking Thyristors
Maker ON Semiconductor
Total Page 5 Pages
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