• Part: MJ15016G
  • Description: Complementary PNP Silicon High-Power Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 256.14 KB
Download MJ15016G Datasheet PDF
onsemi
MJ15016G
Features - High Current- Gain - Bandwidth - Safe Operating Area - These Devices are Pb- Free and are Ro HS pliant- MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector- Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO Vdc Collector- Base Voltage 2N3055AG MJ15015G, MJ15016G VCBO Vdc Collector- Emitter Voltage Base Reversed Biased 2N3055AG MJ15015G, MJ15016G VCEV Vdc 100 200 Emitter- Base Voltage Collector Current - Continuous Base Current Total Device Dissipation @ TC = 25 C 2N3055AG MJ15015G, MJ15016G Derate above 25 C 2N3055AG MJ15015G, MJ15016G VEBO IC IB PD 7.0 15 7.0 115 180 0.65 1.03 Vdc Adc Adc W W W/C W/C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to +200 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data....