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MJ2955G - Complementary Silicon Power Transistors

Download the MJ2955G datasheet PDF. This datasheet also covers the MJ2955 variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • DC Current Gain.
  • hFE = 20.
  • 70 @ IC = 4 Adc.
  • Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc.
  • Excellent Safe Operating Area.
  • Pb.
  • Free Packages are Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJ2955_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJ2955G
Manufacturer onsemi
File Size 190.96 KB
Description Complementary Silicon Power Transistors
Datasheet download datasheet MJ2955G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operating Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.
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