MJ2955G
MJ2955G is Complementary Silicon Power Transistors manufactured by onsemi.
- Part of the MJ2955 comparator family.
- Part of the MJ2955 comparator family.
2N3055(NPN), MJ2955(PNP)
Preferred Device plementary Silicon Power Transistors plementary silicon power transistors are designed for general- purpose switching and amplifier applications.
Features
- DC Current Gain
- h FE = 20- 70 @ IC = 4 Adc
- Collector- Emitter Saturation Voltage
- VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
- Excellent Safe Operating Area
- Pb- Free Packages are Available-
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- Emitter Voltage Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C
VCEO VCER VCB VEB
IC IB PD
60 70 100 7 15 7 115 0.657
Vdc Vdc Vdc Vdc Adc Adc W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to +200 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
PD, POWER DISSIPATION (WATTS)
160 140 120 100 80 60 40 20
0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating
- For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor ponents Industries, LLC, 2005
December,...
