Datasheet Details
| Part number | MJ2955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.11 KB |
| Description | PNP Transistor |
| Datasheet | MJ2955-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | MJ2955 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.11 KB |
| Description | PNP Transistor |
| Datasheet | MJ2955-INCHANGE.pdf |
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·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·plement to Type 2N3055 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -15 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -7 A 115 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W MJ2955 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;
IB= 0 VCBO Collector- Base Voltage IC= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJ2955 | Complementary Power Transistors | Multicomp |
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MJ2955 | PNP SILICON POWER TRANSISTORS | COMSET |
 |
MJ2955 | Silicon PNP Transistor | NTE |
 |
MJ2955 | Complementary Silicon Power Transistors | ST Microelectronics |
 |
MJ2955 | 15 AMPERE POWER TRANSISTORS | Motorola |
| Part Number | Description |
|---|---|
| MJ2955A | PNP Transistor |
| MJ21193 | PNP Transistor |
| MJ21194 | NPN Transistor |
| MJ2500 | PNP Transistor |
| MJ2501 | PNP Transistor |