| Part Number | MJ2955 Datasheet |
|---|---|
| Manufacturer | Multicomp |
| Overview |
2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE =.
* Power dissipation - PD = 115W at TC = 25°C. * DC current gain hFE = 20 to 70 at IC = 4.0A. * VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA. Pin 1. Base 2. Emitter Collector(Case) Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F . |
MJ2955 Datasheet and Specifications PDF
The MJ2955 is a Complementary Power Transistors.
| Part Number | MJ2955 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055 ·Minimum Lot-to-Lot variations fo. 25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCBO Collector- Base Voltage IC= -1mA ; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1. |
| Part Number | MJ2955 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general p. B=400mA VCE(SAT) IC=10A, IB=3.3A VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 20 hFE VCE=4.0V, IC=10A 5.0 hfe VCE=4.0V, IC=1.0A, f=1.0kHz 15 fT VCE=10V, IC=0.5A, f=1.0MHz 2.5 fhfe VCE=4.0V, IC=1.0A, f=1.0kHz 10 Is/b VCE=40V, t=1.0s 2.87 MAX 1.0 5.0 0.7 5.0 1.1 3.0 1.5 70 120 UNIT. |
| Part Number | MJ2955 Datasheet |
|---|---|
| Description | Complementary Silicon Power Transistors |
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications.
Order code 2N3055 MJ2955
Table 1. Device summary
Mar.
* Low collector-emitter saturation voltage * Complementary NPN - PNP transistors Applications * General purpose * Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Order code 2. |