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MJB44H11 - NPN Transistor

Features

  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.0 V (Max) @ 8.0 A.
  • Fast Switching Speeds.
  • Complementary Pairs Simplifies Designs.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V.
  • NJV Prefix for Automotive and Other.

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Datasheet Details

Part number MJB44H11
Manufacturer onsemi
File Size 109.74 KB
Description NPN Transistor
Datasheet download datasheet MJB44H11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.
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