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MJB45H11 - PNP Transistor

Download the MJB45H11 datasheet PDF. This datasheet also covers the MJB44H11 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.0 V (Max) @ 8.0 A.
  • Fast Switching Speeds.
  • Complementary Pairs Simplifies Designs.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V.
  • NJV Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJB44H11_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJB45H11
Manufacturer onsemi
File Size 109.74 KB
Description PNP Transistor
Datasheet download datasheet MJB45H11 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.
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