Datasheet Summary
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated Collector- Emitter Diode and Built- In
Efficient Antisaturation Network
The MJD18002D2 is a state- of- the- art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no longer a need to guarantee an hFE window.
Features
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
- Integrated Collector- Emitter...