MJE13007
MJE13007 is Switch-mode NPN Bipolar Power Transistor manufactured by onsemi.
Features
- SOA and Switching Applications Information
- Standard TO-220
- These Devices are Pb-Free and are Ro HS pliant-
- plementary to the MJE5850 through MJE5852 Series
MAXIMUM RATINGS
Rating
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Collector Current
- Peak (Note 1)
Base Current
- Continuous
Base Current
- Peak (Note 1)
Emitter Current
- Continuous
Emitter Current
- Peak (Note 1)
Total Device Dissipation @ TC = 25 _C Derate above 25 °C
Symbol VCEO VCES VEBO
IC ICM IB IBM IE IEM PD
Value 400 700 9.0 8.0 16 4.0 8.0 12 24 80 0.64
Unit Vdc Vdc Vdc Adc Adc Adc Adc Adc Adc W W/_C
Operating and Storage Temperature
TJ, Tstg
- 65 to 150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
Symbol Rq JC Rq JA TL
Max 1.56 62.5 260
Unit _C/W _C/W
_C
- Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to...
