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MJE170 - (MJE170 - MJE182) Complementary Plastic Silicon Power Transistors

Features

  • http://onsemi. com.
  • Collector.
  • Emitter Sustaining Voltage.
  • VCEO(sus) = 40 Vdc.
  • MJE170, MJE180 = 60 Vdc.
  • MJE171, MJE181 = 80 Vdc.
  • MJE172, MJE182 DC Current Gain.
  • hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current.
  • Gain.
  • Bandwidth Product.
  • fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages.
  • ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V.
  • 0 @ 0.125 in ESD Rati.

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Datasheet Details

Part number MJE170
Manufacturer onsemi
File Size 109.11 KB
Description (MJE170 - MJE182) Complementary Plastic Silicon Power Transistors
Datasheet download datasheet MJE170 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features http://onsemi.com • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, MJE181 = 80 Vdc − MJE172, MJE182 DC Current Gain − hFE = 30 (Min) @ IC = 0.5 Adc = 12 (Min) @ IC = 1.5 Adc Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC = 100 mAdc Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB Epoxy Meets UL 94 V−0 @ 0.
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