MJE803G Features
* High DC Current Gain
* hFE = 2000 (Typ) @ IC = 2.0 Adc
* Monolithic Construction with Built
* in Base
* Emitter Resistors to Limit Leakage
* Multiplication
* Choice of Packages
* MJE700 and MJE800 Series
* These Devices are Pb
Datasheet Details
MJE803G, MJE700G
125.95 KB
Plastic darlington complementary silicon power transistors.
This datasheet PDF includes multiple part numbers: MJE803G, MJE700G.
Please refer to the document for exact specifications by model.
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MJE803G Distributor
