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MLD1N06CL - Power MOSFET

Features

  • current limiting for short circuit protection, integrated Gate.
  • Source clamping for ESD protection and integral Gate.
  • Drain clamping for over.
  • voltage protection and technology for low on.
  • resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate.
  • Source and Gate.
  • Drain clamps allow the device to be applied w.

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Full PDF Text Transcription (Reference)

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MLD1N06CL Power MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in−rush current or a shorted load condition could occur. This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and technology for low on−resistance.
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