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MLP2N06CL
Preferred Device
SMARTDISCRETESt MOSFET 2 Amps, 62 Volts, Logic Level
N−Channel TO−220
This logic level power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and Sensefet technology for low on−resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate−Source and Gate−Drain clamps allow the device to be applied without use of external transient suppression components. The Gate−Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV.
MLP2N06CL Datasheet
