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MMBD352LT1G - Dual Hot Carrier Mixer Diodes

General Description

SOT 23 (TO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

  • Very Low Capacitance.
  • Less Than 1.0 pF @ Zero V.
  • Low Forward Voltage.
  • 0.5 V (Typ) @ IF = 10 mA.
  • NSV Prefix for Automotive and Other.

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Datasheet Details

Part number MMBD352LT1G
Manufacturer onsemi
File Size 230.01 KB
Description Dual Hot Carrier Mixer Diodes
Datasheet download datasheet MMBD352LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @ Zero V • Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage VR 7.0 VCC Stresses exceeding those listed in the Maximum Ratings table may damage the device.