MMBD352LT1 Overview
Key Features
- Very Low Capacitance
- Less Than 1.0 pF @ Zero V
- Low Forward Voltage
- 0.5 V (Typ) @ IF = 10 mA
- Pb-Free Packages are Available
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MMBD352LT1 | Motorola Semiconductor | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1 | Leshan Radio Company | Dual Hot Carrier Mixer Diodes |
| MMBD352 | LGE | Dual Hot Carrier Mixer Diodes |
| MMBD352 | PanJit Semiconductor | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352WT1G | onsemi | Dual Schottky Barrier Diode |