Part MMBD352WT1G
Description Dual Schottky Barrier Diode
Category Diode
Manufacturer onsemi
Size 113.12 KB
onsemi

MMBD352WT1G Overview

Key Features

  • Very Low Capacitance
  • Less Than 1.0 pF @ 0 V
  • Low Forward Voltage
  • 0.5 V (Typ) @ IF = 10 mA
  • AEC Qualified and PPAP Capable
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant*