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MMBD352WT1G

Manufacturer: onsemi
MMBD352WT1G datasheet preview

Datasheet Details

Part number MMBD352WT1G
Datasheet MMBD352WT1G-ONSemiconductor.pdf
File Size 113.12 KB
Manufacturer onsemi
Description Dual Schottky Barrier Diode
MMBD352WT1G page 2 MMBD352WT1G page 3

MMBD352WT1G Overview

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.

MMBD352WT1G Key Features

  • Very Low Capacitance
  • Less Than 1.0 pF @ 0 V
  • Low Forward Voltage
  • 0.5 V (Typ) @ IF = 10 mA
  • AEC Qualified and PPAP Capable
  • NSV Prefix for Automotive and Other

MMBD352WT1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
ON Logo MMBD352WT1 Dual Shottky Barrier Diode ON
Leshan Radio Company Logo MMBD352WT1 Dual Schottky Barrier Diode Leshan Radio Company
Motorola Logo MMBD352WT1 Dual Schottky Barrier Diode Motorola
onsemi logo - Manufacturer

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MMBD352WT1G Distributor

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