MMBD352WT1G Description
MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
MMBD352WT1G Key Features
- Very Low Capacitance
- Less Than 1.0 pF @ 0 V
- Low Forward Voltage
- 0.5 V (Typ) @ IF = 10 mA
- AEC Qualified and PPAP Capable
- NSV Prefix for Automotive and Other