MMBD352WT1G
MMBD352WT1G is Dual Schottky Barrier Diode manufactured by onsemi.
MMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra- fast switching circuits.
Features
- Very Low Capacitance
- Less Than 1.0 pF @ 0 V
- Low Forward Voltage
- 0.5 V (Typ) @ IF = 10 mA
- AEC Qualified and PPAP Capable
- NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant-
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR 7.0 VCC
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings...
