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MMBD352WT1 - Dual Schottky Barrier Diode

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MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA MMBD352WT1 3 1 2 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.