MMBD352 Overview
Key Features
- Total Device Dissipation, Ta = 25°C Derate above 25°C
- Package mounted on 99.5% alumina 10 x 8 x 0.6 mm
| Part | MMBD352 |
|---|---|
| Description | DUAL HOT CARRIER MIXER DIODE |
| Category | Diode |
| Manufacturer | Motorola Semiconductor |
| Size | 23.40 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MMBD352 | LGE | Dual Hot Carrier Mixer Diodes |
| MMBD352 | PanJit Semiconductor | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352WT1G | onsemi | Dual Schottky Barrier Diode |
| MMBD352LT1G | onsemi | Dual Hot Carrier Mixer Diodes |
| MMBD352 | Galaxy Microelectronics | Dual Hot Carrier Mixer Diodes |