| Part Number | MMBD352 Datasheet |
|---|---|
| Manufacturer | LGE |
| Overview |
MMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance— Less than 1.0pF@zero V.
Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free
Applications
Des.
Very low capacitance * Less than 1.0pF@zero V. Low forward voltage *IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free Applications Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD353 Ordering Information Type No. Marking MMBD354 MMBD355. |
MMBD352 Datasheet and Specifications PDF
The MMBD352 is a Dual Hot Carrier Mixer Diodes.
| Part Number | MMBD352 Datasheet |
|---|---|
| Description | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| Manufacturer | PanJit Semiconductor |
| Overview |
MMBD101/MMBD352/MMBD354/MMBD355
SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
VOLTAGE
7.0 Volts
POWER 250 mW
FEATURES
• Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0..
* Low Capacitance,Minimizing Insertion Losses in VHF Applications * Low VF : 0.5V (Typ) at IF=10mA * Extremely Fast Switching Speed * Lead free in comply with EU RoHS 2002/95/EC directives. * Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case : SOT-23, Plastic Termina. |
| Part Number | MMBD352 Datasheet |
|---|---|
| Description | Dual Hot Carrier Mixer Diodes |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance— Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipation Pd=300mW
z Pb-Free package is available.
AP.
z Very low capacitance * Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage *IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD35. |
| Part Number | MMBD352 Datasheet |
|---|---|
| Description | Dual Hot Carrier Mixer Diodes |
| Manufacturer | onsemi |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352LT1/D
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use.
CATHODE
3 CATHODE/ANODE
2 ANODE
MMBD353LT1 CASE 318 * 08, STYLE 19 SOT * 23 (TO * 236AB) DEVICE MARKING MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symb ol Min Max Unit 3 CATHOD. |