MMBD352
Key Features
- Very low capacitance- Less than 1.0pF@zero V. Low forward voltage-IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free
- Part: MMBD352
- Description: Dual Hot Carrier Mixer Diodes
- Category: Diode
- Manufacturer: LGE
- Size: 225.29 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| MMBD352WT1G | onsemi | Dual Schottky Barrier Diode |
| MMBD352 | Won-Top Electronics | SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| MMBD352W | PanJit Semiconductor | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352 | onsemi | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1 | Motorola Semiconductor | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1G | onsemi | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1 | onsemi | Dual Hot Carrier Mixer Diodes |
| MMBD352LT1 | Leshan Radio Company | Dual Hot Carrier Mixer Diodes |
| MMBD352WT1 | onsemi | Dual Shottky Barrier Diode |
| MMBD352WT1 | Leshan Radio Company | Dual Schottky Barrier Diode |