LGE MMBD353
Dual Hot Carrier Mixer Diodes
| Part No. | MMBD353 |
|---|---|
| Datasheet | MMBD353 Download |
| Manufacturer |  LGE |
| Description | Dual Hot Carrier Mixer Diodes |
| Buy | Stock & Price |
FEATURES
Very low capacitance— Less than 1.0pF@zero V. Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS FreeAPPLICATIONS
Designed primarily for UHF mixer applications. Dimensions in inches and (millimeters) MMBD352 MMBD353 Ordering Information Type No. Marking MMBD354 MMBD355 Package Code MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Thermal Resistance,Junction-to-Ambient RθJA Junction and storage temperature TJ,TSTG Limits 7.0 300 417 -55-150 Unit V mW ℃/W ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage Forward voltage Reverse current Diode Capacitanc Symbol Min. Typ. Max. V(BR) 7.0 VF 0.60 0.25 IR 10 CD 1.0 Unit Conditions V IR=100μA V IF=10mA μA VR=3.0V VR=7.