Galaxy Century Microelectronics MMBD353
Dual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available.APPLICATIONS
z Designed primarily for UHF mixer applications. Production specification MMBD352/353/354/355 MMBD352 MMBD353 MMBD354 MMBD355 ORDERING INFORMATION Type No. Marking MMBD352 MMBD353 MMBD354 MMBD355 M5G M4F M6H MJ1 SOT-23 Package Code SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Continuous reverse voltage VR Power Dissipation Pd Thermal Resistance,Junction-to-Ambient RθJA Junction and storage temperature TJ,TSTG Limits 7.0 300 417 -55 to +150 Unit V mW ℃/W ℃ C138 Rev.A 1 Production specification Dual Hot Carrier Mixer Diodes MMBD352/353/354/355ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakd