MMBD352WT1 Description
MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
MMBD352WT1 Key Features
- Very Low Capacitance
- Less Than 1.0 pF @ Zero Volts
- Low Forward Voltage
- 0.5 Volts (Typ) @ IF = 10 mA
- Pb-Free Package is Available
- Rev. 3
- 0.25 10 1.0 pF
- 0.60 V mA