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MMBD352WT1

Manufacturer: ON
MMBD352WT1 datasheet preview

Datasheet Details

Part number MMBD352WT1
Datasheet MMBD352WT1_ONSemiconductor.pdf
File Size 69.31 KB
Manufacturer ON
Description Dual Shottky Barrier Diode
MMBD352WT1 page 2 MMBD352WT1 page 3

MMBD352WT1 Overview

MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.

MMBD352WT1 Key Features

  • Very Low Capacitance
  • Less Than 1.0 pF @ Zero Volts
  • Low Forward Voltage
  • 0.5 Volts (Typ) @ IF = 10 mA
  • Pb-Free Package is Available
  • Rev. 3
  • 0.25 10 1.0 pF
  • 0.60 V mA

MMBD352WT1 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Leshan Radio Company Logo MMBD352WT1 Dual Schottky Barrier Diode Leshan Radio Company
Motorola Logo MMBD352WT1 Dual Schottky Barrier Diode Motorola
ON Semiconductor Logo MMBD352WT1G Dual Schottky Barrier Diode ON Semiconductor
ON logo - Manufacturer

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