MMBD352WT1 Overview
Key Features
- Very Low Capacitance
- Less Than 1.0 pF @ Zero Volts
- Low Forward Voltage
- 0.5 Volts (Typ) @ IF = 10 mA
- Pb-Free Package is Available 1 ANODE 3 CATHODE/ANODE 2 CATHODE
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| MMBD352WT1 | Leshan Radio Company | Dual Schottky Barrier Diode |
| MMBD352WT1 | Motorola Semiconductor | Dual Schottky Barrier Diode |
| MMBD352W | PanJit Semiconductor | SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE |
| MMBD352W | Galaxy Microelectronics | Schottky Barrier Diode |
| MMBD352W | Won-Top Electronics | SURFACE MOUNT SCHOTTKY BARRIER DIODE |