| Part Number | MMBD352WT1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMBD352WT1 Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits..
* Very Low Capacitance * Less Than 1.0 pF @ Zero Volts * Low Forward Voltage * 0.5 Volts (Typ) @ IF = 10 mA * Pb *Free Package is Available 1 ANODE 3 CATHODE/ANODE 2 CATHODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC 3 1 2 Maximum ratings a. |
MMBD352WT1 Datasheet and Specifications PDF
The MMBD352WT1 is a Dual Shottky Barrier Diode.
| Part Number | MMBD352WT1 Datasheet |
|---|---|
| Description | Dual Schottky Barrier Diode |
| Manufacturer | Leshan Radio Company |
| Overview | . . |
| Part Number | MMBD352WT1 Datasheet |
|---|---|
| Description | Dual Schottky Barrier Diode |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352WT1/D
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are su.
M5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR * 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 . |