MMBD352W Datasheet | Galaxy Microelectronics

FEATURES - Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free - Low forward voltage-0.5 Voltage(Typ.) @IF=10m A. APPLICATIONS - For UHF mixer applications. ORDERING INFORMATION Type No. Marking M5 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Continuous reverse voltage Power Dissipation Thermal resistance junction-to-ambient Junction temperature Storage temperature range VR Pd RθJA Tj Tstg 7.0 200 625 150 -55 to +150 Unit V m W ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse current Forward voltage Symbol IR VF Test conditions VR=3V VR=7V IF=10m A MIN Typ. MAX UNIT 0.25 μA 10 0.60 V Diode capacitance VR=0V, f=1MHz 1.0 p F F070 Rev.A .gmesemi. Production specification Schottky Barrier Diode TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...