MMBF170 mosfet equivalent, n-channel mosfet.
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
* These.
requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as smal.
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switchin.
Image gallery
Download