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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF170LT1/D
TMOS FET Transistor
N–Channel
®
1 GATE
DRAIN 3
MMBF170LT1
2 SOURCE
3 1 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 ms) Drain Current – Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc
CASE 318 – 08, STYLE 21 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
MMBF170LT1 Datasheet
