MMBF170LT1
MMBF170LT1 is TMOS FET Transistor manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF170LT1/D
TMOS FET Transistor
N- Channel
®
1 GATE
DRAIN 3
2 SOURCE
3 1 2
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 ms) Drain Current
- Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc
CASE 318
- 08, STYLE 21 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556
- 55 to +150 Unit mW mW/°C...
