MMBF170 Overview
Description
These N-Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
Key Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
