The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET www.onsemi.com
RF Amplifiers, N-Channel
MMBF4416
Features
• This Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Junction and Storage Temperature Range
30
V
−30
V
10
mA
−55 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
MMBF4416 Datasheet
