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MMBT8099LT1G - Amplifier Transistor

Features

  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription

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MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 Unit Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.
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