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MMBT8099LT1
Preferred Device
Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER COLLECTOR 3
http://onsemi.com
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 1.) Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient (Note 2.) Junction and Storage Temperature Range Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 –55 to +150 Unit mW mW/°C °C/W
3 mW mW/°C °C/W °C 1 2 SOT–23 CASE 318 STYLE 6
1. FR–5 = 1.0 X 0.
MMBT8099LT1 Datasheet
