Datasheet4U Logo Datasheet4U.com

MMBT8099 - SMD General Purpose Transistor

General Description

MMBT8099 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KB 80 V 80 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derat

Key Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.

📥 Download Datasheet

Datasheet Details

Part number MMBT8099
Manufacturer TAITRON
File Size 173.93 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT8099 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMBT8099LT1 Amplifier Transistor ON
MMBT8099LT1G Amplifier Transistor ON Semiconductor
MMBT8050 NPN Silicon Epitaxial Planar Transistor SEMTECH ELECTRONICS
MMBT8050C (MMBT8050C/D) NPN Silicon Epitaxial Planar Transistor SEMTECH ELECTRONICS
MMBT8050D (MMBT8050C/D) NPN Silicon Epitaxial Planar Transistor SEMTECH ELECTRONICS

Other Datasheets by TAITRON

Part Number Description
MMBT8098 SMD General Purpose Transistor
MMBT8050 SMD General Purpose Transistor
MMBT8550 SMD General Purpose Transistor
MMBT2222A SMD General Purpose Transistor
MMBT2907A SMD General Purpose Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8099 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8099 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KB 80 V 80 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C /W Ptot Power Dissipation (Note 2) 300 mW TA=25 ˚C 2.