MMBT8098
Unit
Conditions
VCBO VCEO VEBO
IC
Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
KA 60 V 60 V 6.0 V 0.5 A
Ptot RθJA
Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1)
225 mW
TA=25 ˚C
1.8
mW/° C
Derat
Key Features
NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.
Full PDF Text Transcription for MMBT8098 (Reference)
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MMBT8098. For precise diagrams, and layout, please refer to the original PDF.
SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: ...
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g and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8098 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8098 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KA 60 V 60 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C /W Ptot Power Dissipation (Note 2) 300 mW TA=25
MMBT8098 Datasheet
