Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
Total Device Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2)
Thermal Resistance, Junction to Ambient Junction Temperature Storage Temp
Key Features
NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.
Full PDF Text Transcription for MMBT8050 (Reference)
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MMBT8050. For precise diagrams, and layout, please refer to the original PDF.
SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: ...
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g and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8050 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCEO VCBO VEBO IC PD RθJA PD RθJA TJ TSTG Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range M
MMBT8050 Datasheet
