MMBT8050W
MMBT8050W is NPN Silicon Epitaxial Planar Transistor manufactured by SEMTECH.
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications
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Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO IC Ptot Tj TS Value 25 40 6 600 200 150
- 55 to + 150 Unit V V V m A m W
Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 m A at VCE = 1 V, IC = 500 m A Collector Cutoff Current at VCB = 35 V Collector Saturation Voltage at IC = 500 m A, IB = 50 m A Base Saturation Voltage at IC = 500 m A, IB = 50 m A Collector Emitter Breakdown Voltage at IC = 2 m A Collector Base Breakdown Voltage at IC = 10 µA Emitter Base Breakdown Voltage at IE = 100 µA Gain Bandwidth Product at VCE = 5 V, IC = 10 m A, f = 50 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz MMBT8050CW MMBT8050DW Symbol h FE h FE h FE ICBO VCE(sat) VBE(sat) V(BR)CEO V(BR)CBO V(BR)EBO f T CCBO Min. 100 160 40 25 40 6 Typ. 100 12 Max. 250 400 100 0.5 1.2 Unit n A V V V V V MHz p F
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a pany listed on the Hong Kong Stock Exchange, Stock Code: 724)
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Dated : 11/08/2006
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C o m m o n e m itt e r c o lle c t o r c h a r a c te r is tic s
C o m m o n e m it te r c o lle c to r c h a r a c te r is tic s m A 100
0 .3 5 m A 500
0 .9 0 .8 5
0 .3
0 .2 5
0 .2
0 .8
0 .1 5
0 .1
I B = 0 .0 5 m A
0 .7 5
V B E = 0 .7 V
0 0 10 20V VCE
0 0 1 2V VCE
C o l l e c t o r s a t u r a t io n v o l t a g e v e r s u s c o ll e c t o r c u r r e n t
D C c u r r e n t g a in v e r s u s c o ll e c t o r c u r r e n t
V 0 .5 t y p ic a l lim it s a t T a m b = 2 5o C
700 500 400 300...
