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MMBT2907A - SMD General Purpose Transistor

General Description

MMBT2907A -VCEO -VCBO -VEBO -IC Ptot fT R θ j-a TJ TSTG Marking Code Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (D.C) Power Dissipation above 25°C Transition Frequency at f= 100MHz From junction to ambient in

Key Features

  • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Datasheet Details

Part number MMBT2907A
Manufacturer TAITRON
File Size 153.28 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT2907A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT2907A SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT2907A -VCEO -VCBO -VEBO -IC Ptot fT R θ j-a TJ TSTG Marking Code Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (D.C) Power Dissipation above 25°C Transition Frequency at f= 100MHz From junction to ambient in free air Junction Temperature Storage Temperature Range 2F 60 60 5.