MMBT2907AW Datasheet | PanJit Semiconductor

Features PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600m A In pliance with EU Ro HS 2002/95/EC directives and with Halogen Free SOT-323 .087(2.2) .070(1.8) .054(1.35) .045(1.15) MECHANICAL DATA Case: SOT-323 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0048 gram Device Marking : M7A .056(1.40) .047(1.20) .004(.10)MAX. .044(1.1) .035(0.9) .004(.10)MIN. .087(2.2) .078(2.0) Unit: inch (mm) .006(.15) .002(.05) .016(.40) .008(.20) ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous THERMALCHATACTERISTICS Symbol VC E O VC B O VE B O Parameter Max Power Dissipation (Note 1) Storage Temperature Junction Temperaure Thermal Resistance, Junction to Ambient Note 1 : Transistor mouted on FR-5 board 1.0...