MMBT8550 Overview
Description
MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA 556 °C /W PD Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C RθJA 417 °C /W TJ Junction Temperature -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.) 2.
