Kingtronics MMBT8550
PNP Silicon Epitaxial Planar Transistors
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range SYMBOL -VCBO -VCEO -VEBO -IC Ptot Tj Ts 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package VALUE 40 25 6 600 350 150 - 55 to + 150 UNIT V V V mA mW ℃ ℃ Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 500 mA Collector Base Cutoff Current at -VCB = 35 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 µA Collector Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA SYMBOL MIN. TYP. MAX. UNIT MMBT8550C MMBT8550D hFE -ICBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT 100 160 - 250 400 - 40 - - - 100 nA 40 - -V 25 - -V 6 - -V -...