MMBT8550 Datasheet and Specifications PDF

The MMBT8550 is a PNP Silicon Epitaxial Planar Transistor.

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Part NumberMMBT8550 Datasheet
ManufacturerColour
Overview MMBT8550 (2A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into. Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter Voltage at -VCE = 1 V, -IC = 10 mA Transition Frequency at -VCE = 10 V, -IC = 50 mA Symbol MMBT8550C MMBT8550D hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO .
Part NumberMMBT8550 Datasheet
DescriptionSMD General Purpose Transistor
ManufacturerTaitron Components
Overview MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissip.
* PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT8550 SOT-23 Maximum Ratings (T Ambient=25ÂșC unless note.
Part NumberMMBT8550 Datasheet
DescriptionPNP Silicon Epitaxial Planar Transistor
ManufacturerSEMTECH
Overview MMBT8550 (1.5A) PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN tr. ration Voltage at -IC = 800 mA, -IB = 80 mA Base Emitter Voltage at -VCE = 1 V, -IC = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA Symbol MMBT8550C MMBT8550D hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE(on) fT Min. 100 160 40 - - 40 25 6 - - .
Part NumberMMBT8550 Datasheet
DescriptionPNP Silicon Epitaxial Planar Transistors
ManufacturerKingtronics
Overview Website: Email: info@kingtronics.com Tel: (852) 8106 7033 Fax: (852) 8106 7099 MMBT8550 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications As com. aturation Voltage at -IC = 500 mA, -IB = 50 mA Gain Bandwidth Product at -VCE = 5 V, -IC = 10 mA SYMBOL MIN. TYP. MAX. UNIT MMBT8550C MMBT8550D hFE -ICBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) fT 100 160 - 250 400 - 40 - - - 100 nA 40 - -V 25 - -V 6 - -V - - 0.5 V - - 1.