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  ON Semiconductor Electronic Components Datasheet  

MMBTA06L Datasheet

Driver Transistors

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MMBTA06L pdf
MMBTA05L, MMBTA06L
Driver Transistors
NPN Silicon
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBTA05L
MMBTA06L
VCEO
Value
60
80
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MMBTA05L
60
MMBTA06L
80
Emitter −Base Voltage
VEBO 4.0 Vdc
Collector Current − Continuous
IC
500 mAdc
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
CDM Class IV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation FR− 5 PD 225
Board (Note 1) TA = 25°C
Derate above 25°C
1.8
Thermal Resistance,
Junction−to−Ambient
RqJA
556
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance,
Junction−to−Ambient
RqJA
417
Junction and Storage Temperature TJ, Tstg −55 to +150
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
1H M G
G
1GM M G
G
MMBTA05LT1
MMBTA06LT1,
SMMBTA06L
1H, 1GM = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 10
1
Publication Order Number:
MMBTA05LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBTA06L Datasheet

Driver Transistors

No Preview Available !

MMBTA06L pdf
MMBTA05L, MMBTA06L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA05L
MMBTA06L
V(BR)CEO
60
80
Vdc
Emitter −Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA05L
MMBTA06L
V(BR)EBO
ICES
ICBO
4.0
− Vdc
0.1 mAdc
mAdc
0.1
0.1
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100 −
100 −
VCE(sat) − 0.25 Vdc
VBE(on) − 1.2 Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
fT 100 − MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
5.0 ms
+10 V
0
tr = 3.0 ns
TURN-ON TIME
-1.0 V
VCC
+40 V
TURN-OFF TIME
+VBB
VCC
+40 V
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
www.onsemi.com
2


Part Number MMBTA06L
Description Driver Transistors
Maker ON Semiconductor
Total Page 6 Pages
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MMBTA06L pdf
MMBTA06L Datasheet PDF
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