MMDL770T1G - Schottky Barrier Diode

onsemi

Key Features

Extremely Low Minority Carrier Lifetime Very Low Capacitance.
1.0 pF @ 20 V Low Reverse Leakage.
200 nA (max) High Reverse Voltage.
70 V (min) These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com 1.0 pF.

MMDL770T1G schottky barrier diode by onsemi - Datasheet Preview

Datasheet Details

Part number	MMDL770T1G
Manufacturer	onsemi
File Size	106.24 KB
Description	Schottky Barrier Diode
Datasheet	MMDL770T1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Voltage − 70 V (min) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1.