MMDL770T1 Datasheet | ETL

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. - Extremely Low Minority Carrier Lifetime - Very Low Capacitance - 1.0 p F @ 20 V - Low Reverse Leakage - 200 n A (max) - High Reverse Voltage - 70 Volts (min) - Available in 8 mm Tape and Reel - Device Marking: 5H 1.0 p F SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value 70 Unit Vdc PLASTIC SOD- 323 CASE 477 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 - 55 to+150 Unit m W m W/°C °C/W °C R θJA T J , T stg - FR- 5 Minimum Pad ORDERING INFORMATION Device MMDL770T1 Package SOD- 323 Shipping 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 35 V) Forward Voltage (I F = 1.0 m Adc) (I F = 10 m A) Symbol V (BR)R CT IR Min 70 - - Typ - 0.5 9.0 Max - 1.0 200 Unit Volts p F n Adc - 0.7 Vdc S4- 1/3 Free Datasheet http://../ TYPICAL CHARACTERISTICS τ, MINORITY CARRIER LIFETIME...