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Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max) • High Reverse Voltage — 70 Volts (min) • Available in 8 mm Tape and Reel • Device Marking: 5H
MMDL770T1
1.0 pF SCHOTTKY BARRIER DIODE
1
1 CATHODE
2 ANODE
2
MAXIMUM RATINGS
Symbol VR Rating Reverse Voltage Value 70 Unit Vdc
PLASTIC SOD– 323 CASE 477
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.
MMDL770T1 Datasheet
