ETL MMDL770T1
Schottky Barrier Diode
MAXIMUM RATINGS
Symbol VR Rating Reverse Voltage Value 70 Unit Vdc PLASTIC SOD– 323 CASE 477 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 –55 to+150 Unit mW mW/°C °C/W °C R θJA T J , T stg *FR–5 Minimum Pad ORDERING INFORMATION Device MMDL770T1 Package SOD–323 Shipping 3000 / Tape & ReelELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 35 V) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mA) Symbol V (BR)R CT IR Min 70 — — Typ — 0.5 9.0 Max — 1.0 200 Unit Volts pF nAdc V F — 0.7 1.0 Vdc S4–1/3 Free Datasheet MMDL770T1 TYPICAL CHARACTERISTICS τ, MINORITY CARRIER LIFETIME (ps) 2.0 500 C T , TOTAL CAPACITANCE (pF) MMBD770T1 f = 1.0 MHz 1.6 MMBD770T1 400 KRAKAUER METHOD 300 1.2 0.8 200 0.4 100 0 0 5.0 10 15 20 25 30 35 40 45 50 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1.