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MMDL770T1G - Schottky Barrier Diode

Key Features

  • Extremely Low Minority Carrier Lifetime Very Low Capacitance.
  • 1.0 pF @ 20 V Low Reverse Leakage.
  • 200 nA (max) High Reverse Voltage.
  • 70 V (min) These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com 1.0 pF.

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Datasheet Details

Part number MMDL770T1G
Manufacturer onsemi
File Size 106.24 KB
Description Schottky Barrier Diode
Datasheet download datasheet MMDL770T1G Datasheet

Full PDF Text Transcription for MMDL770T1G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMDL770T1G. For precise diagrams, and layout, please refer to the original PDF.

MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fa...

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UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Voltage − 70 V (min) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1.