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MMDL770T1G - Schottky Barrier Diode

Features

  • Extremely Low Minority Carrier Lifetime Very Low Capacitance.
  • 1.0 pF @ 20 V Low Reverse Leakage.
  • 200 nA (max) High Reverse Voltage.
  • 70 V (min) These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi. com 1.0 pF.

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Datasheet preview – MMDL770T1G

Datasheet Details

Part number MMDL770T1G
Manufacturer ON Semiconductor
File Size 106.24 KB
Description Schottky Barrier Diode
Datasheet download datasheet MMDL770T1G Datasheet
Additional preview pages of the MMDL770T1G datasheet.

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Full PDF Text Transcription

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MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Voltage − 70 V (min) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1.
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