MMDL770T1G Datasheet | onsemi

Features - - - - - Extremely Low Minority Carrier Lifetime Very Low Capacitance - 1.0 p F @ 20 V Low Reverse Leakage - 200 n A (max) High Reverse Voltage - 70 V (min) These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant http://onsemi. 1.0 p F SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol VR Value 70 Unit Vdc 1 CATHODE 2 ANODE 2 1 SOD- 323 CASE 477 STYLE 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Range Symbol PD Max 200 1.57 635 - 55 to +150 Unit m W m W/°C °C/W °C Rq JA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR- 5 Minimum Pad MARKING DIAGRAM 5H M G G 5H = Device Code M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMDL770T1G Package SOD- 323 (Pb- Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2011 June, 2011 - Rev. 3 Publication Order Number: MMDL770T1/D Free Datasheet http://../ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 m A) Diode Capacitance (VR = 20 V, f = 1.0 MHZ) Reverse Leakage (VR = 35 V) Forward Voltage (IF = 1.0 m Adc) (IF = 10 m A) Symbol V(BR)R CT IR VF Min 70 - - - - Typ - 0.5 9.0 0.42 0.7 Max - 1.0 200 0.5 1.0 Unit V p F n Adc Vdc TYPICAL CHARACTERISTICS 2.0 CT, TOTAL CAPACITANCE (p F) f = 1.0 MHz 1.6 t , MINORITY...