Click to expand full text
MMDL770T1 Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
• • • • • •
Extremely Low Minority Carrier Lifetime Very Low Capacitance – 1.0 pF @ 20 V Low Reverse Leakage – 200 nA (max) High Reverse Voltage – 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H
http://onsemi.com
1.0 pF SCHOTTKY BARRIER DIODE
MAXIMUM RATINGS
Symbol VR Reverse Voltage Rating Value 70 Unit Vdc
1 2
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.
MMDL770T1 Datasheet
