MMDL770T1 Datasheet | onsemi

MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high- efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. - - - - - - Extremely Low Minority Carrier Lifetime Very Low Capacitance - 1.0 p F @ 20 V Low Reverse Leakage - 200 n A (max) High Reverse Voltage - 70 Volts (min) Available in 8 mm Tape and Reel Device Marking: 5H http://onsemi. 1.0 p F SCHOTTKY BARRIER DIODE MAXIMUM RATINGS Symbol VR Reverse Voltage Rating Value 70 Unit Vdc 1 2 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 - 55 to +150 Unit m W m W/°C °C/W °C PLASTIC SOD- 323 CASE 477 Rq JA TJ, Tstg - FR- 5 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMDL770T1 Package SOD- 323 Shipping 3000 / Tape & Reel © Semiconductor ponents Industries, LLC, 2001 January, 2000 - Rev. 0 Publication Order Number: MMDL770T1/D Free Datasheet http://../ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 20 Volts, f = 1.0 MHZ) Reverse Leakage (VR = 35 V) Forward Voltage (IF = 1.0 m Adc) (IF = 10 m A) Symbol V(BR)R 70 CT - IR - VF - 0.7 1.0 9.0 200 Vdc 0.5 1.0 n Adc - - p F Min Typ Max Unit Volts TYPICAL CHARACTERISTICS 2.0 CT, TOTAL CAPACITANCE (p F) 1.6 1.2 0.8 0.4 0 MMBD770T1 500 f = 1.0 MHz t , MINORITY CARRIER LIFETIME (ps) MMBD770T1 400 KRAKAUER METHOD 300 200 100...