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MOC8204M Datasheet 6-pin Dip High Voltage Phototransistor Optocouplers

Manufacturer: onsemi

Overview: 6-Pin DIP High Voltage Phototransistor Optocouplers 4N38M, H11D1M, H11D3M,.

General Description

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators.

A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.

The device is supplied in a standard plastic six−pin dual−in−line package.

Key Features

  • High Voltage:.
  • MOC8204M, BVCEO = 400 V.
  • H11D1M, BVCEO = 300 V.
  • H11D3M, BVCEO = 200 V.
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN.
  • EN/IEC60747.
  • 5.
  • 5, 850 V Peak Working Insulation Voltage.

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