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ON Semiconductort
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 –55 to +150 MPSA29 100 100 Unit Vdc Vdc Vdc mAdc
MPSA28 MPSA29*
*ON Semiconductor Preferred Device
1
mW mW/°C Watts mW/°C °C
2
3
CASE 29–11, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.
MPSA29 Datasheet
