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  ON Semiconductor Electronic Components Datasheet  

MPSW45A Datasheet

One Watt Darlington Transistors NPN Silicon

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MPSW45A pdf
MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington
Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MPSW45A
MPSW45
Symbol
VCES
Value
40
50
Unit
Vdc
Collector −Base Voltage
MPSW45
VCBO
50
Vdc
MPSW45A
60
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
12 Vdc
1.0 Adc
1.0 W
8.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 2.5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 toww+w1.5Da0taSheet4°UC.com
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
50 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
BASE
2
COLLECTOR 3
EMITTER 1
TO−92 (TO−226)
CASE 29−10
1 STYLE 1
2
3
MARKING DIAGRAM
MPS
W45x
AYWW G
G
MPSW45x = Device Code
x = 45A Devices
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1
Publication Order Number:
MPSW45/D


  ON Semiconductor Electronic Components Datasheet  

MPSW45A Datasheet

One Watt Darlington Transistors NPN Silicon

No Preview Available !

MPSW45A pdf
MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
MPSW45
MPSW45A
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
MPSW45
MPSW45A
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base− Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base −Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Min Max
40 −
50 −
50 −
60 −
12 −
− 100
− 100
− 100
25,000
15,000
4,000
150,000
1.5
− 2.0
− 2.0
100 −
− 6.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2


Part Number MPSW45A
Description One Watt Darlington Transistors NPN Silicon
Maker ON Semiconductor
Total Page 6 Pages
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MPSW45A pdf
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